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FCP11N60/FCPF11N60
SuperFET
FCP11N60/FCPF11N60
General Description
SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
TM
Features
* * * * * 650V @Tj = 150C Typ. Rds(on)=0.32 Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested
D
!

G! GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
!
S
Absolute Maximum Ratings
Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current
TC = 25C unless otherwise noted
Parameter - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FCP11N60 11 7 33
FCPF11N60 11* 7* 33* 30 340 11 12.5 4.5
Units A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
125 1.0
36 0.29 -55 to +150 300
* Drain current limited by maximum junction termperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FCP11N60 1.0 0.5 62.5 FCPF11N60 3.5 -62.5 Units C/W C/W C/W
(c)2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FCP11N60/FCPF11N60
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A, TJ = 25C VGS = 0 V, ID = 250 A, TJ = 150C ID = 250 A, Referenced to 25C VGS = 0 V, ID = 11 A VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 --------650 0.6 700 --------1 10 100 -100 V V V/C V A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 5.5 A VDS = 40 V, ID = 5.5 A
(Note 4)
3.0 ---
-0.32 9.7
5.0 0.38 --
V S
Dynamic Characteristics
Ciss Coss Crss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz VDS = 0V to 480 V, VGS = 0 V VDS = 25 V, VGS = 0 V, f = 1.0 MHz -----1148 671 63 35 95 1490 870 82 --pF pF pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 11 A, VGS = 10 V
(Note 4, 5)
VDD = 300 V, ID = 11 A, RG = 25
(Note 4, 5)
--------
34 98 119 56 40 7.2 21
80 205 250 120 52 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 11 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 11 A, dIF / dt = 100 A/s
(Note 4)
------
---390 5.7
11 33 1.4 ---
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 5.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 11A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
(c)2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FCP11N60/FCPF11N60
Typical Characteristics
10
2
ID , Drain Current [A]
10
1
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
1
150 C
o
10
0
10
0
25 C
o
-55 C
o
10
-1
* Notes : 1. 250 s Pulse Test o 2. TC = 25 C
* Note 1. VDS = 40V 2. 250 s Pulse Test
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.8
IDR , Reverse Drain Current [A]
RDS(ON) [], Drain-Source On-Resistance
VGS = 10V
0.6
10
1
0.4
VGS = 20V
10
0
150 C
o
25 C
* Notes : 1. VGS = 0V 2. 250 s Pulse Test
o
0.2
* Note : TJ = 25 C
o
0.0 0 5 10 15 20 25 30 35 40
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
6000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VDS = 100V
10
5000
VDS = 250V VDS = 400V
VGS , Gate-Source Voltage [V]
4000
8
Capacitance [pF]
Coss
3000
* Notes : 1. VGS = 0 V 2. f = 1 MHz
6
2000
Ciss
4
1000
Crss
2
* Note : ID = 11A
0 -1 10
0
10
0
10
1
0
5
10
15
20
25
30
35
40
45
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
(c)2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FCP11N60/FCPF11N60
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON) , (Normalized) Drain-Source On-Resistance
2.0
1.0
1.5
1.0
* Notes : 1. VGS = 10 V 2. ID = 5.5 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
10
2
Operation in This Area is Limited by R DS(on)
10
2
Operation in This Area is Limited by R DS(on)
10
1
100 us
10
1
100 us 1 ms 10 ms
10 ms
10
0
DC
ID, Drain Current [A]
ID, Drain Current [A]
1 ms
10
0
100 ms DC
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
10
-2
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area for FCP11N60
Figure 9-2. Maximum Safe Operating Area for FCPF11N60
12.5
10.0
ID, Drain Current [A]
7.5
5.0
2.5
0.0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
Figure 10. Maximum Drain Current vs. Case Temperature
(c)2004 Fairchild Semiconductor Corporation Rev. B, March 2004
FCP11N60/FCPF11N60
Typical Characteristics
(Continued)
10
0
Z (t), T h e rm a l R e s p o n s e
D = 0 .5
0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
* N o te s : o 1 . Z J C ( t) = 1 .0 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
PDM t1 t2
J C
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for FCP11N60
Z (t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
10
-1
0 .0 2 0 .0 1
* N o te s : o 1 . Z J C ( t) = 3 .5 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
PDM t1
s in g le p u ls e
J C
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FCPF11N60
(c)2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FCP11N60/FCPF11N60
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg 10V Qgs Qgd
VGS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS VGS RG
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG DUT
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp
ID (t) VDS (t) Time
10V
(c)2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FCP11N60/FCPF11N60
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
(c)2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FCP11N60/FCPF11N60
Package Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. B, March 2004
FCP11N60/FCPF11N60
Package Dimensions
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. B, March 2004
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I8

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